Storage News

NAND Flash Memory Demand Prompts Additional Fab 5

With the consumer demand for smartphones, tablets and other electronic devices continuing to fuel strong global demand for NAND flash memory, Toshiba Corporation and SanDisk Corporation responded with the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

Incorporating advanced earthquake-absorbing structures and integrating multiple power compensation techniques for protection against unexpected disruptions, this new facilty, according to Market Watch, uses 24 nanometer (nm) process technology and expects its first wafer outs next month.

"Consumer demand for smartphones, tablets and other electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest, most advanced process node.”