SAN JOSE, Calif. — Kioxia America is introducing a new embedded flash memory device.
Kioxia America developed a “sampling” of its Universal Flash Storage (UFS) embedded flash memory devices, supporting the physical layer interface MIPI M-PHY v. 5.04, according to the company last month.
The devices are designed for a variety of mobile applications, including smartphones, and to deliver high speed read and write performance.
Kioxia believes the next-generation of UFS provides significant increases in performance, enabling smartphones and other mobile products to “enhance their capabilities and end-user experiences in the 5G era and beyond.”
The next-generation UFS has a theoretical interface speed of up to 23.2 Gbps per lane in HS-GEAR5 mode.
Kioxia’s latest device lineup uses the company’s BiCS FLASH 3D flash memory and is available in three capacities: 128 GB, 256 GB and 512 GB.
Over previous generation devices, sequential read and write performance of the 256 GB device is improved by about 90% and 70%.
Random read and write performance of the 256 GB device is improved by about 35% and 60% over previous generation devices.
“Moving forward, we will continue to drive these advances, maintaining our UFS memory leadership role,” said Scott Beekman, VP of the memory business unit, Kioxia America.