Kioxia Develops New UFS Embedded Flash Memory Devices

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SAN JOSE, Calif. — Kioxia America is introducing a new embedded flash memory device.

Kioxia America developed a “sampling” of its Universal Flash Storage (UFS) embedded flash memory devices, supporting the physical layer interface MIPI M-PHY v. 5.04, according to the company last month.

The devices are designed for a variety of mobile applications, including smartphones, and to deliver high speed read and write performance.

Kioxia believes the next-generation of UFS provides significant increases in performance, enabling smartphones and other mobile products to “enhance their capabilities and end-user experiences in the 5G era and beyond.”

The next-generation UFS has a theoretical interface speed of up to 23.2 Gbps per lane in HS-GEAR5 mode.

Kioxia’s latest device lineup uses the company’s BiCS FLASH 3D flash memory and is available in three capacities: 128 GB, 256 GB and 512 GB.

Over previous generation devices, sequential read and write performance of the 256 GB device is improved by about 90% and 70%.

Random read and write performance of the 256 GB device is improved by about 35% and 60% over previous generation devices.

“Moving forward, we will continue to drive these advances, maintaining our UFS memory leadership role,” said Scott Beekman, VP of the memory business unit, Kioxia America.

Chris Ehrlich
Chris Ehrlich
Chris Ehrlich is the managing editor of several web properties in the TechnologyAdvice network. He has over 20 years of experience delivering content-based results across journalism and communications, including on B2B technologies. As a leader in digital journalism, he’s driven targeted content that resonates with audiences and increases key metrics. As a leader in branded communications, he’s driven multi-channel content for clients that spreads their messages and generates measurable returns. He holds a B.A. in English and political science from Denison University in Ohio.

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